| 摘要 |
<p>PURPOSE:To provide the method for inspecting the defects of reticules by forming >=2 sheets of resist patterns of the reticules without mis-registration in the optimum positions on a wafer and making comparative inspection without the erroneous recognition of the normal patterns as defects at the time of making the comparative inspection of the resist patterns. CONSTITUTION:The resist pattern 3 of the reticule A and the resist pattern 4 of the reticule B are formed without the mis-registration in the optimum positions at the time of the comparative inspection by aligning the reticules and the wafer 1 at time of exposing the wafer by using the alignment mark patterns of the patterns 5 of the reticules C previously formed on the wafer. The resist pattern 3 of the reticule A and the resist pattern 4 of the reticule B are formed on the wafer 1 in this constitution, by which the exact reticule inspection is executed without erroneously recognizing the normal patterns as the defects at the time of the comparative inspection.</p> |
