| 摘要 |
PURPOSE:To enable to obtain a semiconductor device provided with a metal accommodating vessel having a superior heat radiating property and a superior thermal fatigue resisting property by a method wherein the recessed type vessel is formed of a composite alloy, and moreover thickness of the base part of the vessel thereof is made thinner than thickness of the side parts. CONSTITUTION:An Si diode pellet 1 performed with metallization treatment to both the sides is soldered to a recessed type accommodating vessel 2 and inner leads 3 respectively, and a harmetic seal 5 is welded to the accommodating vessel 2 and the leads 3. At this construction, the vessel 2 is consisting of a composite metal formed by unifying in one body mutually different metals, and thickness of the base part thereof is made thinner than thickness of the side parts. By constructing a semiconductor device in such a way, the semiconductor device having a superior heat radiating property and a superior thermal fatigue resisting property can be obtained. |
