发明名称 |
CAPACITANCE ELEMENT AND ITS MANUFACTURE |
摘要 |
PURPOSE:To obtain a capacitance element in which the resistance value of a first electrode and a second electrode is low and whose capacity is high by a method wherein the first electrode having a recessed and protruding surface is formed on an insulating substrate, a dielectric film is formed so as to be a recessed and protruding face corresponding to the recessed and protruding face of the first electrode and a second electrode which is faced with the first electrode is formed. CONSTITUTION:As a first electrode, a first conductive layer 2 is formed on an insulating substrate 1; a second conductive layer 8 is formed on it. A first mask layer is formed on it; a third conductive layer 7 having a recessed and protruding face is formed by making use of the first mask layer as a mask by an electrolytic plating operation which uses the second conductive layer 8 as an electrode for electrolytic plating use. A dielectric film 9 is formed on the first electrode so as to have a recessed and protruding face. A second mask layer having a window is formed on the dielectric film 9; a fourth dielectric layer is formed by making use of it as a mask; a fifth conductive layer 15 is formed on it by an etching treatment using a third mask layer as a mask; a second electrode is formed. |
申请公布号 |
JPH04262514(A) |
申请公布日期 |
1992.09.17 |
申请号 |
JP19910042955 |
申请日期 |
1991.02.15 |
申请人 |
NIPPON TELEGR & TELEPH CORP <NTT> |
发明人 |
HIRANO MAKOTO;ASAI KAZUYOSHI;IMAI YUUKI |
分类号 |
H01G4/33;H01G4/06;H01G13/00 |
主分类号 |
H01G4/33 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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