| 摘要 |
PROBLEM TO BE SOLVED: To prevent deterioration in ON-current caused by a depletion phenomenon of a groove gate of a groove type transistor, and prevent an increase in variation of the threshold voltage of a planar type transistor comprising P- or N-type gate having conductivity type different from that of the groove type transistor, in a semiconductor device where the groove type transistor and the planar type transistor comprising a PN gate coexist. SOLUTION: The semiconductor device has a structure in which a high-concentration impurity diffusion layer 9 is embedded in a polysilicon film as a gate electrode of the groove type transistor. COPYRIGHT: (C)2009,JPO&INPIT |
