| 摘要 |
1,116,186. Semiconductor device. ALLMANNA SVENSKA ELEKTRISKA A.B. 14 Oct., 1965 [16 Oct., 1964], No. 43541/65. Heading H1K. In a semi-conductor device comprising a base, carrier plate, intermediate plate, support plate and a semi-conductor body, the component parts of the device are assembled in a specific order using both high and low temperature solder so as to minimize the risk of cracking the semi-conductor body. A silicon wafer 1 has two Mo support plates 2 and 3 attached thereto by means of Au/Sb layer 4 and Al layer 5. Intermediate plate 6 of Mo and carrier plate 7 of Cu are joined together by Ag/Cu eutectic solder 8 and then flattened by cold pressing. The body 6, 7, 8 is soldered 9 with Au/Sn to a copper base bolt 10 and then the body 1, 2, 3, 4, 5 is connected to plate 6 using low temperature solder i.e. Au/Sn. Alternatively, the joints 9 and 11 may be made in the reverse order or simultaneously. The disc 1 may also be of Ge whilst the plates 2, 3 and 6 may alternatively be of W, Fe, Co or Ni or alloys thereof, and the carrier plate 7 and base 10 of aluminium or silumin. The joints 9 and 11 may be made using tin, lead or low melting point alloys, whilst that at 8 may be of silver. |
