SEMICONDUCTOR PROCESS AND INTEGRATED CIRCUIT HAVING DUAL METAL OXIDE GATE DIELECTRIC WITH SINGLE METAL GATE ELECTRODE,申请号KR20067026032-传众专利搜索

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发明名称	SEMICONDUCTOR PROCESS AND INTEGRATED CIRCUIT HAVING DUAL METAL OXIDE GATE DIELECTRIC WITH SINGLE METAL GATE ELECTRODE
摘要
申请公布号	KR20070017555(A)	申请公布日期	2007.02.12
申请号	KR20067026032	申请日期	2006.12.11
申请人		发明人
分类号	H01L29/78	主分类号	H01L29/78
代理机构		代理人
主权项
地址

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