| 摘要 |
<p>PURPOSE:To provide a phase shift photomask using a film made of a material excellent in etching selectivity and in moisture resistance as an etching stopper layer. CONSTITUTION:In the phase shift photomask made of at least a substrate 30 and a phase shift pattern 44, which is made of a material provided with a shielding pattern or directly on the surface of the substrate and containing mainly silicon oxide, a transparent film for phase shifter is securely precisely etched by etching stopper action of the etching layer 31, which is provided on the surface of the substrate 30 and is made of a mixture of Al2O3 and MgO, ZrO, Ta2O3 or Hfo, when forming the phase shift pattern by etching.</p> |
