NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

A nitride semiconductor light emitting device is provided to improve a light emitting efficiency and to reduce an operation voltage by using an improved multilayer thin film structure as a current spread layer. An N side contact layer(103) is formed on a substrate. A current spread layer(105) is formed on the N side contact layer. An active layer(106) is formed on the current spread layer. A P type clad layer(107) is formed on the active layer. The current spread layer is formed like a multilayer thin film structure. The multilayer thin film structure is composed of first nitride semiconductor layers made of InxGa(1-x)N(0< x <1) and second nitride semiconductor layers made of InyGa(1-y)N(0 y<1, y< x). N type dopants are selectively implanted into the nitride semiconductor layers.