| 摘要 |
PROBLEM TO BE SOLVED: To prevent the peeling of a second insulation film in polishing by improving the adhesiveness of the second insulation film laminated on a first insulation film by irradiating scribing lines of the first insulation film with plasma. SOLUTION: In a method of manufacturing a semiconductor device, an insulation film for electrically insulating wirings of a multilayer wiring structure formed on a substrate 11 is formed of a laminate structure of the first insulation film 21 and the second insulation film 22. This method is provided with a process of applying plasma processing to the surface of the first insulation film 21 in the scribing lines 13 formed on the substrate 11 before forming the second insulation film 22 after forming the first insulation film 21. COPYRIGHT: (C)2007,JPO&INPIT
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