| 摘要 |
<p>PURPOSE:To form a composite oxide thin film of good quality and uniform thickness regardless of a shape of a foundation. CONSTITUTION:In a manufacturing method of a PZT thin film 28 provided to an upper surface of a silicon oxide film, a precursor is generated through hydrolysis and paly condensation of diisopropoxylead, terapropoxytitanium and tetraisopropoxyziroconium which flow into a reaction chamber together with vapor by using a CVD device 2 and then the precursor is deposited on a substrate heated to 650 deg.C to form the crystalline PZT thin film 28.</p> |
