| 摘要 |
PURPOSE:To provide a light diode array chip which is high in light takeout efficiency and suitable for integrating a light emitting element at high density. CONSTITUTION:This chip has structure of injecting a current into the p-n junction part provided on the top of a semiconductor substrate 20 through a region 22 of impurities introduced into the semiconductor substrate 20, and the ohmic junction to individual electrodes 23 is taken in the place other than light emitting surface. Hereby, the light generated in a light emitting part (impurity region 22) can be taken out without being interrupted with the individual electrodes 23. Moreover, since the area of contact between the electrode 23 and the light emitting part 22 can be set independently of the size of the light emitting part 22, even if it is high-integrated, the contact resistance does not increase. |
