| 摘要 |
PURPOSE:To form a high-quality insulating film at low temp., by irradiating the surface of a substrate by ultraviolet rays not only in the course of a reaction but also before and after a reaction at the time of subjecting an insulating film to vapor growth on the substrate surface by using a gaseous starting material composed principally of inorganic silane, etc. CONSTITUTION:At the time of forming the insulating film of SiO2, PSG, BPSG, etc., on the substrate surface by the oxidizing reaction of the gaseous starting material composed principally of inorganic silane or organic silane, the substrate surface is irradiated by ultraviolet rays before and after the reaction as well as in the course of the reaction. In this way, the reaction is allowed to proceed at low temp. (about 400 deg.C) and, moreover, the good-quality insulating film free from bonding of various groups such as -OH groups, etc., and water can be formed.
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