| 摘要 |
PROBLEM TO BE SOLVED: To provide a stable semiconductor device that does not cause Si substrate to be oxidized when a ferroelectric film is formed, can prevent an interface layer from being formed, and does not cause ferroelectric characteristics to deteriorate by the heat treatment of gas containing a hydrogen element. SOLUTION: A nitride ferroelectric film 4, that is made of Sr2NbN3, is formed on a p-type Si substrate 1. After that, a TiN film 6 that becomes a gate electrode is formed by the reactive sputtering method using a mixed gas of N2, and a TiN film and an Sr2NbN3 film of a prescribed region are etched and removed by a mixed gas of Ar and Cl2 or the like using a resist mask. Then, after arsenic (As) that becomes a p-type impurity is injected, annealing is made, and a source region 2 and a drain region 3 are formed, thus completing an MFSFET.
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