| 摘要 |
PCT No. PCT/JP83/00295 Sec. 371 Date Apr. 30, 1984 Sec. 102(e) Date Apr. 30, 1984 PCT Filed Sep. 2, 1983 PCT Pub. No. WO84/01056 PCT Pub. Date Mar. 15, 1984.A semiconductor photoelectric transducer which is an improvement of a field effect transistor or static induction transistor type photoelectric transducer, is provided with a plurality of gates on both sides of a source, for controlling a main current, and in which the distances between the gate regions and the source region are made different, thereby separating the functions of both gates to provide for enhanced performance.
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