| 摘要 |
A microlens of a CMOS image sensor and its manufacturing method are provided to improve the reproducibility of the microlens and to control precisely the distance between microlenses by using a dry etching process with an excellent accuracy. A color filter array(100) with a plurality of color filters is formed on a semiconductor substrate having a photodiode and an MOS transistor. A planarization layer(200) is formed on the color filter array to compensate color filters for a stepped portion. A silicon oxide layer(400) is formed on the planarization layer. A plurality of photoresist pattern(300) spaced apart from each other are formed on the silicon oxide layer corresponding to the color filters. A CxFy based polymer for enclosing each photoresist pattern is formed on the resultant structure by using a process gas containing C5F8, CH2F2, Ar and O2. The polymer, the photoresist patterns and the silicon oxide layer are sequentially etched by using an etch recipe with the same etch selectivity for the polymer, the photoresist patterns and the silicon oxide layer.
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