发明名称 SIMULATION METHOD, SIMULATION SYSTEM, AND METHOD OF CORRECTING MASK PATTERN
摘要 <P>PROBLEM TO BE SOLVED: To solve the problem that a large restriction is imposed on a design when a fixed point is installed in empirical lithography simulation. <P>SOLUTION: A simulation system 1 comprises an input acceptor 10, a calculator 30, and a determiner 40. The input acceptor 10 accepts an input about measured dimensions of a transfer pattern. The calculator 30 includes an intensity calculator 32 and a corrected light intensity calculator 36. The light intensity calculator 32 calculates a light intensity for each position. The corrected light intensity calculator 36 calculates a corrected light intensity by adding a corrected value including a product of the light intensity and a temporary light reaction coefficient to the light intensity. The determiner 40 sets, as constants, thresholds of light intensities at two edges forming a pair prescribing calculated dimensions of the transfer pattern in the simulation, and determines the thresholds and the light reaction coefficient through regression calculation so that a difference becomes minimum between the calculated dimensions and the measured dimensions. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007324273(A) 申请公布日期 2007.12.13
申请号 JP20060151244 申请日期 2006.05.31
申请人 NEC ELECTRONICS CORP 发明人 KAWAKAMI YUKIYA
分类号 H01L21/027;G03F1/36;G03F1/68;G03F1/70 主分类号 H01L21/027
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