| 摘要 |
One or serially connected field effect transistors are cross coupled with each other, first terminals of nonvolatile variable resistance elements are connected to their storage nodes, and the other terminals of the variable resistance elements are connected to a power supply line to thereby form a memory cell. By controlling the voltage supplied to this power supply line, data of the memory cell immediately before turning off the power is stored in it when the power is turned off.
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