| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of relieving the defective memory cell to be deteriorated due to rewriting stress or the like, with respect to the semiconductor memory device with a redundancy circuit. <P>SOLUTION: The semiconductor memory device capable of writing and erasing of data electrically, is provided with: a monitoring means for monitoring a holding characteristic of the memory cell when the data of memory cell in a memory area are read out; and a storage means for storing the deteriorated state of the holding characteristic of the memory cell on the basis of an output of the monitoring means, wherein the memory cell of which the deterioration is detected based on data of the storage means, is replaced with a memory cell of another address by an address control circuit so as to read and write the data. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
