| 摘要 |
PROBLEM TO BE SOLVED: To provide a diode using two-dimensional electron gas generated at a hetero-junction surface of a nitride semiconductor layer, capable of achieving a technology for adjusting a leak current to be small by lowering a forward voltage drop.SOLUTION: When a two-dimensional electron gas induction inhibition layer is formed in the vicinity to an anode electrode 10 or a two-dimensional electron gas induction promotion layer 14 is formed in a region spaced from the anode electrode 10, a two-dimensional electron gas concentration decreases in the vicinity to the anode electrode 10 to decrease a leak current, and at a position spaced from the anode electrode 10, the two-dimensional electron gas concentration increases to lower a forward voltage drop.SELECTED DRAWING: Figure 4 |
