| 摘要 |
PROBLEM TO BE SOLVED: To provide an ion implantation device, for uniformly implanting ion into several substrates. SOLUTION: This device comprises a vacuum vessel 1 having an evacuation vent 6 for evacuation and an admission port 5 for supplying a plasma raw material, a substrate holder 18 for holding several substrates 10 in the vacuum vessel 1, a bushing 12a for insulating the substrate holders 18 from the vacuum vessel 1, a pulse high-voltage power source 15 for applying a relatively positive or negative voltage to a potential of vacuum vessel 1 onto several substrates 10, a high-frequency induction coil 23 for generating plasma so as to surround the substrates 10 by discharging electricity in the vacuum vessel 1, and for implanting ions into the substrates 10, and a high frequency generator 26 for supplying high frequency current to the high-frequency induction coil 23. The high-frequency induction coil 23 is arranged in each gap between the several substrates 10. |
