| 摘要 |
<p>An EUV(Extreme UltraViolet) lithography apparatus is provided to improve a throughput of a lithography process by exposing two wafers at the same time. A light source irradiates a laser. A light amplifier amplifies the laser from the light source. A reticle(130) adds information on an exposure pattern to the irradiated laser. A reticle stage fixes the reticle. First and second mirrors(140,150) reflect the laser from the reticle to predetermined paths. A beam splitter(160) divides a path of the laser from the second mirror. Third and fourth mirrors(170,180) reflect a first laser from the beam splitter to predetermined paths. A first wafer(190) and a first wafer stage perform an exposure process by using the first laser from the fourth mirror. A fifth mirror(200) reflects a second laser from the beam splitter to the predetermined path. A second wafer(210) and a second wafer stage perform the exposure process by using the second laser from the fifth mirror.</p> |
