INTEGRIERTE SCHALTUNG IN KOMPLEMENTAERER SCHALTUNGSTECHNIK MIT EINEM SUBSTRATVORSPANNUNGS-GENERATOR.

摘要

One or more FETs (T1) of a first channel type is arranged in a dopded semiconducting substrate (1) of a first conductor type. One or more FETs (T2) of a second type is arranged in a tub-shaped zone (2) of a second conductor type in the substrate. The zone is connected to a supply voltage (VDD) and the substrate to a bias voltage generator (16). The Pn junction between the earthed connection of the first FET and the substrate is reverse biassed. The substrate bias voltage generator (16) output (17) is connected to the earth point via an electronic switch (S1) which is controlled by that output (17). The bias generator (16) may be integrated in the semiconducting substrate (1).