| 摘要 |
PURPOSE: A low pressure chemical vapor deposition apparatus having an inductor structure capable of removing or minimizing a fine structure difference generated during depositing a polysilicon due to a temperature grade in a tube of the apparatus is provided. CONSTITUTION: The low pressure chemical vapor deposition apparatus having an inductor structure for depositing a polysilicon, the apparatus comprising: an inductor(10) extending to a top portion of a tube for accommodating a wafer, as the inductor(10) goes in a direction of an outlet, an inner diameter of the inductor(10) becomes larger, and gas discharge holes are formed at a surface of the inductor, as the gas discharge holes go in the direction of an outlet, intervals between the gas discharge holes become larger.
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