FABRICATION OF SEMICONDUCTOR DEVICES WITH CUP-SHAPED REGIONS

摘要

A method for forming a semiconductor device having a substantially cup-shaped region of one conductivity type between two regions of opposite conductivity type to preferably form a field effect transistor device. The region may be formed through one opening in an insulating layer located upon the surface of the device. Two successive diffusion operations of opposite conductivity types made through this same opening in the insulating layer forms the cup-shaped region to the desired thickness.