Complementary metal-oxide semiconductor.

摘要

A complementary metal-oxide semiconductor being comprised of at least one P channel MOSFET and at least one N channel MOSFET is disclosed. In the above semiconductor, -least one additional doped portion is formed close to at least one of the P and N channel MOSFETs at a small part of the region which is driven by the voltage supply. The additional doped! portion is directly connected to the voltage supply