| 摘要 |
PROBLEM TO BE SOLVED: To provide the method of manufacturing a memory device whose deletion characteristic is improved. SOLUTION: The method of manufacturing a memory device, whose deletion characteristics are improved, comprises the steps of (a) sequentially forming a tunneling oxide layer, an electric charge storage layer, and a blocking oxide layer on a semiconductor substrate, (b) carrying out heat treatment of the semiconductor substrate on which the tunnelling layer, the electric charge storage layer, and the blocking oxide layer are formed under a gas atmosphere, such that the fixed oxide film electric charges of negative voltage are contained, (c) exposing the upper surface of the substrate by forming a gate electrode layer on the blocking oxide layer and etching the both sides of the electric charge storing layer, the blocking oxide layer, and the gate electrode layer, and (d) forming first and second impurity regions by making the exposed upper surface of the substrate doped with impurity. COPYRIGHT: (C)2007,JPO&INPIT
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