| 摘要 |
PROBLEM TO BE SOLVED: To provide a metal polishing liquid that has improved polishing selectivity of copper/tantalum, suppresses the occurrence of dishing while maintaining rapid polishing speed, can improve flatness in a surface to be polished, and can reduce the occurrence of scratches, and to provide a polishing method using the metal polishing liquid. SOLUTION: The metal polishing liquid is used for chemical/mechanical polishing of a conductive film made of copper or a copper alloy, and a barrier metal film in the manufacturing of a semiconductor device. The metal polishing liquid contains a colloidal silica particle where the primary particle diameter is 10-40 nm and the secondary particle diameter is 50-80 nm (a), and peroxodisulfate (b). COPYRIGHT: (C)2009,JPO&INPIT |
