| 摘要 |
PROBLEM TO BE SOLVED: To provide a method by which a nitride semiconductor, particularly a nitride semiconductor substrate which is used for a light-emitting element, such as light-emitting diode, laser diode, etc., and a photodetector, such as the solar battery, optical sensor, etc., and is superior in crystallinity can be grown by reducing the crystal defect of the substrate. SOLUTION: A first protective film, made of a material in which a nitride semiconductor hardly grows, is grown on a substrate and the protective film is etched to a stripe- or grid-like shape, until the substrate is exposed. Then a buffer layer and a first nitride semiconductor are made to grow from the window section of the first protective film, and after only the first protective film is removed and recesses are formed on the exposed surface of the substrate, a second nitride semiconductor is formed by growing the semiconductor in the lateral direction, by using the first nitride semiconductor as a nucleus. |
