发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device which is improved in reliability while reducing the size of a chip. SOLUTION: A semiconductor device 100 has an I/O circuit 14. The I/O circuit 14 has an I/O pad 22, that is formed on an interlayer insulating film 40 positioned on the element-forming region of a semiconductor substrate. The I/O pad 22 has laminated via structure 20, that is composed of first and second electrode pads 32 and 34 and a via 36 for connecting the first electrode pad 32 to the second pad 34.
申请公布号 JP2002016069(A) 申请公布日期 2002.01.18
申请号 JP20000195913 申请日期 2000.06.29
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 MIMURA TADAAKI;KAGAMI TOSHIHIRO
分类号 H01L23/52;H01L21/3205;H01L21/60;H01L21/822;H01L27/04 主分类号 H01L23/52
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