发明名称 |
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is improved in reliability while reducing the size of a chip. SOLUTION: A semiconductor device 100 has an I/O circuit 14. The I/O circuit 14 has an I/O pad 22, that is formed on an interlayer insulating film 40 positioned on the element-forming region of a semiconductor substrate. The I/O pad 22 has laminated via structure 20, that is composed of first and second electrode pads 32 and 34 and a via 36 for connecting the first electrode pad 32 to the second pad 34. |
申请公布号 |
JP2002016069(A) |
申请公布日期 |
2002.01.18 |
申请号 |
JP20000195913 |
申请日期 |
2000.06.29 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
MIMURA TADAAKI;KAGAMI TOSHIHIRO |
分类号 |
H01L23/52;H01L21/3205;H01L21/60;H01L21/822;H01L27/04 |
主分类号 |
H01L23/52 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|