发明名称 |
Surface acoustic wave device |
摘要 |
A surface acoustic wave device has a high electromechanical coefficient and reflection coefficient, and also has an improved frequency-temperature characteristic that is achieved by forming a SiO<SUB>2 </SUB>film on an IDT so as to prevent cracking from occurring on a surface of the SiO<SUB>2 </SUB>film so that desired properties can be reliably obtained. The surface acoustic wave device includes at least one IDT, which is composed of a metal or an alloy having a density higher than that of Al and is formed on a 25° to 55° rotation-Y plate X propagation LiTaO<SUB>3 </SUB>substrate, and a SiO<SUB>2 </SUB>film disposed on the LiTaO<SUB>3 </SUB>substrate so as to cover the at least one IDT for improving the frequency-temperature characteristic.
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申请公布号 |
US7034433(B2) |
申请公布日期 |
2006.04.25 |
申请号 |
US20020270207 |
申请日期 |
2002.10.12 |
申请人 |
MURATA MANUFACTURING CO., LTD. |
发明人 |
KADOTA MICHIO;NAKAO TAKESHI;MIMURA MASAKAZU |
分类号 |
H01L41/08;H01L41/09;H01L41/18;H01L41/22;H03H3/08;H03H9/02;H03H9/145;H03H9/25 |
主分类号 |
H01L41/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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