CHEMICAL MECHANICAL POLISHING APPARATUS AND METHOD

摘要

The present invention relates to chemical-mechanical polishing apparatus and method. As a chemical-mechanical polishing apparatus which polishes a polishing layer of a wafer, the apparatus comprises: a polishing plate being provided with a polishing pad which rotates while contacting with a polishing surface of the wafer to polish the polishing surface; and a temperature control unit which controls the temperature of the polishing pad. The apparatus reduces the time required in an initial stage where the amount of polishing per unit time is maintained as low, thereby reducing the entire time required for the chemical-mechanical polishing process and improving productivity. Also, the apparatus provides an environment where an error of a polishing amount of a polishing surface of a wafer is easily controlled to be small.