| 摘要 |
PROBLEM TO BE SOLVED: To shorten processing time and make a film uniform in quality and in thickness, even if it is a large area substrate such as a liquid crystal display panel or the like. SOLUTION: A plasma chamber is supplied with oxygen and helium gas from a gas inlet port 7 for plasma generation, and a resonator 6 is supplied with high frequency so as to generate a plasma. There monosilane diluted with helium from a process gas inlet port 8 is supplied, as process gas, and reactive seeds (oxygen radical and monosilane) are brought into contact with the line-form one extending in the direction of its depth, and a stage 2 is carried right (forward trip), whereby a film is grown over the entire surface of the substrate 9. In short, the film growth over the entire surface of the substrate 9 is performed, by bringing the reactive seeds into contact with the line-form one so that they cross the direction of carriage of the substrate 9 and carrying the substrate 9. The same processing as the outward trip is performed for the backward trip, too. |
