| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device superior in characteristics and reliability. SOLUTION: The device comprises a blocking film formed on a glass substrate, an oxide film formed on the blocking film, a semiconductor film formed on the oxide film, a gate insulating film formed on the semiconductor film, and a gate electrode formed on the gate insulating film. The semiconductor film and the gate insulating film are irradiated with infrared rays. The blocking film is made of a silicon nitride film, and the semiconductor film is set to a thickness of 30-150 nm, and the gate insulating film is set to a thickness of 70-120 nm.</p> |
