| 发明名称 | Integration of dense and variable pitch fin structures | ||
| 摘要 | Methods for forming semiconductor devices. Methods for forming fin structures include forming first sidewalls around a first set of mandrels. The first set of mandrels is removed and second sidewalls are formed around the first sidewalls and a second set of mandrels. The first sidewalls and the second set of mandrels are removed and an underlying layer around the second sidewalls is etched. | ||
| 申请公布号 | US9378972(B2) | 申请公布日期 | 2016.06.28 |
| 申请号 | US201514632313 | 申请日期 | 2015.02.26 |
| 申请人 | GLOBALFOUNDRIES INC. | 发明人 | Cheng Kangguo;Colburn Matthew E.;Doris Bruce B.;Khakifirooz Ali |
| 分类号 | H01L21/311;H01L21/308;H01L27/088;H01L21/84;H01L27/108;H01L29/06;H01L27/11 | 主分类号 | H01L21/311 |
| 代理机构 | Hoffman Warnick LLC | 代理人 | Ivers Catherine;Hoffman Warnick LLC |
| 主权项 | 1. A method for forming fin structures, comprising: forming first sidewalls around a first set of mandrels; removing the first set of mandrels; forming second sidewalls around the first sidewalls and a second set of mandrels; removing the first sidewalls and the second set of mandrels; and etching an underlying layer around the second sidewalls. | ||
| 地址 | Grand Cayman KY | ||