| 发明名称 |
Metal-imino complexes suitable for use as vapor deposition precursors |
| 摘要 |
<p>Certain organometallic compounds in the form of imino complexes are provided. Such complexes are particularly suitable for use as vapor deposition precursors. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds.</p> |
| 申请公布号 |
EP1884518(A1) |
申请公布日期 |
2008.02.06 |
| 申请号 |
EP20070113256 |
申请日期 |
2007.07.26 |
| 申请人 |
ROHM AND HAAS ELECTRONIC MATERIALS LLC |
发明人 |
SHENAI-KHATKHATE, DEODATTA VINAYAK;WANG, QING MIN |
| 分类号 |
C07F1/08;C07F3/02;C07F5/00;C07F7/00;C07F7/10;C07F7/28;C07F9/00;C07F11/00;C07F15/04;C23C16/06 |
主分类号 |
C07F1/08 |
| 代理机构 |
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