SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a low-threshold high-performance semiconductor device and its manufacturing method. SOLUTION: The semiconductor device 1 has a CMOS on the surface of a silicon substrate 10. Its PMOS 1 has a gate electrode G4 formed by depositing polycrystalline silicon 21 on tungsten which surface has been treated with tungsten nitride, and its NMOS 1 has a gate electrode G2. A tungsten thin film is reacted with tungsten silicide 23 by a heat treatment after forming polycrystalline silicon 21 on the tungsten thin film to shift the work function of the gate electrode G2 to that of the gate electrode G4. COPYRIGHT: (C)2006,JPO&NCIPI