Capacitor arrays for minimizing gradient effects and methods of forming the same

摘要

Methods of forming semiconductor devices. The method includes forming a capacitor array comprising a plurality of cells in a two-dimensional grid. The step of forming includes forming a plurality of operational capacitors in a first subset of the plurality of cells along a diagonal of the array, the plurality of operational capacitors comprising a first operational capacitor formed in a cell at a first edge of the capacitor array and at a first edge of the diagonal of the capacitor array. The step of forming also includes forming a plurality of dummy patterns about the plurality of operational capacitors in the capacitor array in a second subset of the plurality of cells to achieve symmetry in the grid about the diagonal. The method also includes electrically coupling each one of the plurality of operational capacitors to another one of the plurality of operational capacitors.

主权项

1. A method of forming a semiconductor device, comprising:
forming a capacitor array comprising a plurality of cells in a two-dimensional grid, the step of forming comprising: forming a plurality of operational capacitors in a first subset of the plurality of cells along a diagonal of the array, the plurality of operational capacitors comprising a first operational capacitor formed in a cell at a first edge of the two-dimensional grid and at a first edge of the diagonal of the capacitor array; and forming a plurality of dummy patterns about the plurality of operational capacitors in the capacitor array in a second subset of the plurality of cells to achieve symmetry in the grid about the diagonal; and electrically coupling each one of the plurality of operational capacitors to another one of the plurality of operational capacitors; and wherein the first subset of the plurality of cells comprise each cell of a continuous diagonal of the array, the continuous diagonal including operational capacitors but not dummy patterns.