| 摘要 |
PROBLEM TO BE SOLVED: To improve the junction state of the interface between a p-type amorphous semiconductor layer and a transparent conductive film, made of zinc oxide and to improve various kinds of characteristics. SOLUTION: A first transparent conductive film 11 made of tin oxide is formed on a glass substrate 10. A second transparent conductive film 12 made of zinc oxide is formed by 10nm thickness on the first transparent conductive film 11. Then, an extremely thin-film layer 13 made of III-group element is formed on the second transparent conductive film 12. A p-type a-SiC layer 14 is formed on the extremely thin-film layer 13. An i-type a-Si layer 15 is formed on the p-type a-SiC layer 14. Then, an n-type a-Si layer 16 is formed on the i-type a-Si layer 15. A rear surface electrode 17 is formed on the n-type a-Si layer 16. A protection film 18 made of resin is formed on the rear surface electrode 17. |
