| 摘要 |
A semiconductor device and a manufacturing method thereof are provided to form a layer having a uniform thickness by forming a layer having an in-plane polishing amount distribution and compensating the in-plane polishing amount distribution. A first interlayer dielectric(22) is formed on a semiconductor wafer(21). A via plug of a first group is formed in the first interlayer dielectric. A second interlayer dielectric(24) is formed on the first interlayer dielectric. A via plug of a second group is formed in the second interlayer dielectric. The first interlayer dielectric has a first thickness at a center of the semiconductor wafer. The first interlayer dielectric has a second thickness at a periphery of the semiconductor wafer. The second interlayer dielectric has a third thickness at a center of the semiconductor wafer. The second interlayer dielectric has a fourth thickness at a periphery of the semiconductor wafer.
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