发明名称 SEMICONDUCTOR CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor circuit device capable of reducing variation of a reference voltage due to radiation exposure.SOLUTION: A semiconductor circuit device is a reference voltage circuit device in which a depletion type MOSFET2 and an enhancement type MOSFET1 are serially connected, and a difference of a threshold voltage of the depletion type MOSFET2 and the enhancement type MOSFET1 is set to a reference voltage. In the depletion type MOSFET2, a drain is connected to power supply terminal Vs, and a gate is connected to a source. In the enhancement type MOSFET1, the source is connected to a ground terminal Gnd, and the gate is connected to the drain. A resistor 3 or the depletion type MOSFET are serially connected between the depletion type MOSFET2 and the enhancement type MOSFET1. By the resistor or depletion type MOSFET, an increase amount of a current amount due to the radiation exposure is converted to a voltage, and a decrease amount of an output voltage due to the radiation exposure is compensated.SELECTED DRAWING: Figure 1
申请公布号 JP2016092304(A) 申请公布日期 2016.05.23
申请号 JP20140227317 申请日期 2014.11.07
申请人 FUJI ELECTRIC CO LTD;NATIONAL RESEARCH AND DEVELOPMENT AGENCY JAPAN AEROSPACE EXPLORATION AGENCY 发明人 WATANABE YASUMASA;KUBOYAMA TOMOJI;IKEDA NAOMI
分类号 H01L21/822;G05F3/24;H01L21/8236;H01L27/04;H01L27/088 主分类号 H01L21/822
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