Capacitive device

摘要

A capacitive device includes a substrate, a well structure buried in the substrate, a first stacked layer that includes a first dielectric layer and a first conductive layer, a cap dielectric layer, and a first electrode. The well has a predetermined doping type. The well includes a first shoulder portion having an upper surface, a second shoulder portion having an upper surface, and a first trench between the first and second shoulder portions. The first trench has sidewalls and a bottom surface. The first dielectric layer is lined along at least a portion of the upper surfaces of the first and second shoulder portions, the sidewalls of the first trench, and the bottom surface of the first trench. The first conductive layer is lined along the first dielectric layer. The cap dielectric layer is over the well, the first dielectric layer, and the first conductive layer. The first electrode is in contact with the first shoulder portion and extends through the cap dielectric layer, the first conductive layer, and the first dielectric layer.

主权项

1. A capacitive device, comprising:
a substrate having a well structure buried therein, the well structure having a first predetermined doping type, the well comprising:
a first shoulder portion and a second shoulder portion, each having an upper surface;a first trench, between the first and second shoulder portions, the first trench having sidewalls defining a trench width and a bottom surface defining a trench depth; anda first stacked layer comprising a first dielectric layer on at least a portion of the upper surfaces of the first and second shoulder portions, the sidewalls and the bottom surface of the first trench, and a first conductive layer on the first dielectric layer; a cap dielectric layer over the well and the first stacked layer; and a first electrode in direct contact with the first shoulder portion wherein the first electrode extends through the cap dielectric layer and the first stacked layer.