| 发明名称 | Method for semiconductor manufacturing | ||
| 摘要 | A method includes followings operations. A semiconductor substrate is provided. A photoresist is formed on the semiconductor substrate. Dopants are inserted into the photoresist to carbonize a portion of the photoresist. An etch steam is sprayed on the semiconductor substrate and the photoresist. A hole is formed at a surface of the photoresist by the etch steam. The etch steam is flowed into the hole so as to remove a portion of the photoresist at an interface between the semiconductor substrate and the photoresist. The photoresist is decorticated from the semiconductor substrate. | ||
| 申请公布号 | US9406525(B2) | 申请公布日期 | 2016.08.02 |
| 申请号 | US201314081630 | 申请日期 | 2013.11.15 |
| 申请人 | Taiwan Semiconductor Manufacturing Company Ltd. | 发明人 | Chi Pei-Wen;Lu Hsueh-Chin;Liao Shin Hsien;Liang Hung-Hsin |
| 分类号 | H01L21/033;H01L21/311;H01L21/67 | 主分类号 | H01L21/033 |
| 代理机构 | WPAT, P.C., Intellectual Property Attorneys | 代理人 | WPAT, P.C., Intellectual Property Attorneys ;King Anthony |
| 主权项 | 1. A method, comprising: providing a semiconductor substrate; forming a photoresist on the semiconductor substrate; inserting dopants into the photoresist with a predetermined concentration to carbonize the photoresist to make a dopant concentration of a first portion of the photoresist is greater than a dopant concentration of a second portion of the photoresist; spraying an etch steam around the photoresist; forming a hole at a surface of the second portion of the photoresist by the etch steam; flowing the etch steam into the hole and further removing a portion of the photoresist near an interface between the semiconductor substrate and the photoresist; and decorticating the photoresist from the semiconductor substrate. | ||
| 地址 | Hsinchu TW | ||