| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing apparatus that can suppress variation of a distribution in a reaction chamber for raw material gas and enables stable etching.SOLUTION: A plasma processing apparatus comprises: a stage 4 for supporting a substrate 5 in a reaction chamber 1; a cover 8 arranged to confront the stage 4 in the reaction chamber 1; a Faraday shield electrode 10 (hereinafter referred to as FS electrode) arranged at the opposite side to the stage 1 of the cover 8; a dielectric member 3 which is arranged at the opposite side to the stage 1 of the cover 8 and blocks an opening of the reaction chamber; and a dielectric coil 15 disposed at the outside of the reaction chamber 1 of the dielectric member 3. The FS electrode 10 has at least one of a slit portion and a window portion, a gas introduction port 6 to which raw material of plasma is introduced is provided between the cover 8 and the dielectric member 3, and the cover 8 has a gas blow-out port 9 which is provided at a portion confronting at least a part of the slit portion and the window portion and supplies the raw material gas introduced to the gas introduction port 6 into the reaction chamber 1.SELECTED DRAWING: Figure 1 |
