Programmable impedance elements and devices that include such elements

摘要

Programmable impedance elements structures, devices and methods are disclosed. Methods can include: forming a first electrode layer within an electrode opening that extends through a cap layer; planarizing to expose a top of the cap layer; cleaning the exposed top surface of the cap layer to remove residual species from previous process steps. Additional methods can include forming at least a base ion conductor layer having an active metal formed therein that may ion conduct within the ion conductor layer; and forming an inhibitor material that mitigates agglomeration of the active metal within the base ion conductor layer as compared to the active metal alone. Programmable impedance elements and/or devices can have switching material and electrodes parallel to both bottoms and sides of a cell opening formed in a cell dielectric. Other embodiments can include an ion conductor layer having an alloy of an active metal, or two ion conductor layers in contact with an active electrode.

主权项

1. A programmable impedance element, comprising:
a first electrode that extends through at least a first dielectric layer; a switching material and a second electrode formed within a cell opening of a cell insulating layer formed over the first dielectric layer, first portions of the switching material and second electrode being formed parallel to a bottom of the cell opening, and second portions of the switching material and second electrode being formed parallel to a side surface of the cell opening; and an insulating fill layer formed within the cell opening over at least a portion of the switching material and the second electrode, the insulating fill layer has a top surface substantially coplanar with a top surface of the cell insulating layer.