Hochgeschwindigkeitsdiode und Verfahren zur Herstellung

摘要

In a semiconductor device a first diode having a pn junction and a second diode having a combination of a Schottky barrier and a pn junction in a current-passing direction are provided side by side in a direction perpendicular to the current-passing direction. When a forward current with a current density JF is passed into the second diodes, the relation $is\; established\; in\; a\; forward\; voltage\; VF\; range\; of\; 0.1\; (V)\; to\; 0.3\; (V).\; The\; first\; diode\; is\; constituted\; by\; first\; and\; second\; semiconductor\; regions\; (13,\; 15)\; forming\; a\; pn\; junction\; therebetween,\; the\; second\; being\; in\; ohmic\; contact\; with\; one\; main\; electrode\; (3),\; and\; having\; an\; impurity\; concentration\; higher\; than\; that\; of\; the\; first\; semiconductor\; region\; (13).\; The\; second\; diode\; is\; constituted\; by\; first\; and\; third\; semiconductor\; regions\; (13,\; 16)\; forming\; a\; pn\; junction\; therebetween,\; the\; third\; being\; in\; contact\; through\; a\; Schottky\; barrier\; with\; the\; one\; main\; electrode\; (3)\; and\; having\; an\; impurity\; concentration\; higher\; than\; the\; first\; semiconductor\; region\; (13).\mathop{\mathrm{image}}$