发明名称 Process for fabricating a thin-film transistor
摘要 Process for forming the source and drain electrodes (6, 7), which comprises the steps consisting in firstly depositing a first layer of metal having a defined thickness, under an atmosphere of a mixture of PH3 and Ar gases in a predetermined proportion so that a small quantity of PH3 is contained in the first layer of metal, and secondly in depositing a second layer of metal having a defined thickness onto the first layer of metal, under an atmosphere of Ar gas, in such a way that the source and drain electrodes additionally act as an ohmic contact. <IMAGE>
申请公布号 FR2665300(A1) 申请公布日期 1992.01.31
申请号 FR19910000807 申请日期 1991.01.24
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 CHANG, KYUJEONG;KYUJEONG
分类号 H01L21/285;H01L21/336;H01L29/40;H01L29/45;H01L29/78;H01L29/786 主分类号 H01L21/285
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