SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PURPOSE:To display the stabilized characteristics without much effects of process parameters by containing a resistor region, whose impurity concentration is lower than that in source/drain regions on both sides of the channel regions of a driving transistor in a transfer transistor at the neighborhood of the channel region. CONSTITUTION:Transistors arranged beneath gate electrodes G1 and G2 become driving transistors Tr1 and Tr2. Transistors arranged beneath word lines WLa and WLb become transfer transistors Q1 and Q2. The transfer transistor Q1 beneath the word line WLa and the driving transistor Tr1 are connected in series with an n-type region S/Da and an n<->-type resistor region R1. The other gate G2 is connected to the mutual connecting point X1 of these transistors. The impurity concentration of the source/drain regions of the transfer transistor Q1 is lower than the impurity concentration of the source/drain regions of the driving transistor Tr1, and the short-channel effect can be suppressed.