| 摘要 |
A process for nitriding materials containing silicon to form a silicon nitride material predominantly in the alpha phase is disclosed which includes nitriding the silicon-containing material by (a) heating the silicon-containing material in an atmosphere containing at least hydrogen in the temperature range of about 0 DEG C. to about 800 DEG C. and (b) thereafter, nitriding the silicon-containing material by subjecting the silicon-containing material to a nitriding atmosphere containing at least nitrogen gas in the temperature range of from about 1000 DEG C. to about 1450 DEG C. to effect nitriding.
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