发明名称 THIN FILM TRANSISTOR SUBSTRATE FOR LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF MANUFACTURE
摘要 PROBLEM TO BE SOLVED: To minimize a light leakage phenomenon in a planar driving system liquid crystal display device. SOLUTION: A thin film transistor substrate for the liquid crystal display device includes gate lines 22 formed on a transparent insulating substrate, plural data lines 62, 65 and 68 which cross; the gate lines being insulated from each other, a pixel region which is defined by the crossing of the gate lines and the data lines and in which a common electrode 28 and a pixel electrode are formed opposite to each other at a fixed interval, a thin film transistor electrically connected with the gate lines and the data lines and including a semiconductor layer containing silicon and a light shielding film consisting of the same substance as the semiconductor layer.
申请公布号 JP2001324727(A) 申请公布日期 2001.11.22
申请号 JP20010078971 申请日期 2001.03.19
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 DEN SHOEKI
分类号 G02F1/1368;G02F1/1343;G02F1/1345;G02F1/1362;G09F9/30;H01L21/336;H01L29/786 主分类号 G02F1/1368
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