| 摘要 |
PROBLEM TO BE SOLVED: To provide a photovoltaic device at low cost by reducing the consumption of high purity Si material. SOLUTION: Photoelectric conversion elements 2 are mounted in a plurality of recesses 17 formed on a support 3, respectively, and reflected light inside the recesses 17 is cast to the photoelectric conversion element 2. The photoelectric conversion element is almost spherical, and a p-type amorphous SiC (abbreviated a-SiC) layer 8 with an optical band gap wider than an n-type amorphous Si (abbreviated a-Si) is applied to the outer side of the n-type a-Si layer 7 on the center side. Then a p-n junction is formed. A first conductor 13 of the support is connected with the p-type a-SiC layer 8 of the photoelectric conversion element at the bottom of a recess or the nearby place thereof. A second conductor 14 through an electrical insulator 15 of the support is connected with the n-type a-Si layer 7 of the photoelectric conversion element. |
